Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs)

Anupama Yadav; M. Antia; E. Flitsiyan; L. Chernyak; I. Lubomirsky; J. Salzman

doi:10.1149/06914.0137ecst

Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs)

Anupama Yadav, M. Antia, E. Flitsiyan, L. Chernyak, I. Lubomirsky, J. Salzman

Department of Molecular Chemistry and Materials Science Perlman

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of ⁶⁰Co gamma-irradiation on AlGaN/GaN High Electron Mobility Transistors (HEMTs) were studied by means of temperature dependent Cathodoluminescence (CL). The CL spectra were examined for several devices with radiation exposures of gamma-ray doses up to 1000 Gy, and for temperature ranging from 25°C to 125°C. Gamma-irradiation causes the CL intensity of HEMTs to decrease by creating defects that act as non-radiative recombination centers. The activation energy was observed to decrease as dosage was incremented to 200 Gy. The decrease in activation energy is related to Compton electron induced increase in carrier lifetime. However for doses above 200 Gy, the activation energy increases as the dose increases. This behavior could be explained by the formation of large electrically active defect complexes through the addition of new radiation defects to the defects formed at low doses.

Original language	English
Pages (from-to)	137-144
Number of pages	8
Journal	ECS Transactions
Volume	69
Issue number	14
DOIs	https://doi.org/10.1149/06914.0137ecst
Publication status	Published - Sept 2015
Event	State-of-the-Art Program on Compound Semiconductors 58, (SOTAPOCS 58) (at the 228th ECS Meeting) - Phoenix, United States Duration: 11 Oct 2015 → 15 Oct 2015 Conference number: 58

All Science Journal Classification (ASJC) codes

General Engineering

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10.1149/06914.0137ecst

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title = "Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs)",

abstract = "The effects of 60Co gamma-irradiation on AlGaN/GaN High Electron Mobility Transistors (HEMTs) were studied by means of temperature dependent Cathodoluminescence (CL). The CL spectra were examined for several devices with radiation exposures of gamma-ray doses up to 1000 Gy, and for temperature ranging from 25°C to 125°C. Gamma-irradiation causes the CL intensity of HEMTs to decrease by creating defects that act as non-radiative recombination centers. The activation energy was observed to decrease as dosage was incremented to 200 Gy. The decrease in activation energy is related to Compton electron induced increase in carrier lifetime. However for doses above 200 Gy, the activation energy increases as the dose increases. This behavior could be explained by the formation of large electrically active defect complexes through the addition of new radiation defects to the defects formed at low doses.",

author = "Anupama Yadav and M. Antia and E. Flitsiyan and L. Chernyak and I. Lubomirsky and J. Salzman",

year = "2015",

month = sep,

doi = "10.1149/06914.0137ecst",

language = "English",

volume = "69",

pages = "137--144",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "The Electrochemical Society",

number = "14",

note = "State-of-the-Art Program on Compound Semiconductors 58, (SOTAPOCS 58) (at the 228th ECS Meeting), SOTAPOCS ; Conference date: 11-10-2015 Through 15-10-2015",

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TY - JOUR

T1 - Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs)

AU - Yadav, Anupama

AU - Antia, M.

AU - Flitsiyan, E.

AU - Chernyak, L.

AU - Lubomirsky, I.

AU - Salzman, J.

N1 - Conference code: 58

PY - 2015/9

Y1 - 2015/9

N2 - The effects of 60Co gamma-irradiation on AlGaN/GaN High Electron Mobility Transistors (HEMTs) were studied by means of temperature dependent Cathodoluminescence (CL). The CL spectra were examined for several devices with radiation exposures of gamma-ray doses up to 1000 Gy, and for temperature ranging from 25°C to 125°C. Gamma-irradiation causes the CL intensity of HEMTs to decrease by creating defects that act as non-radiative recombination centers. The activation energy was observed to decrease as dosage was incremented to 200 Gy. The decrease in activation energy is related to Compton electron induced increase in carrier lifetime. However for doses above 200 Gy, the activation energy increases as the dose increases. This behavior could be explained by the formation of large electrically active defect complexes through the addition of new radiation defects to the defects formed at low doses.

AB - The effects of 60Co gamma-irradiation on AlGaN/GaN High Electron Mobility Transistors (HEMTs) were studied by means of temperature dependent Cathodoluminescence (CL). The CL spectra were examined for several devices with radiation exposures of gamma-ray doses up to 1000 Gy, and for temperature ranging from 25°C to 125°C. Gamma-irradiation causes the CL intensity of HEMTs to decrease by creating defects that act as non-radiative recombination centers. The activation energy was observed to decrease as dosage was incremented to 200 Gy. The decrease in activation energy is related to Compton electron induced increase in carrier lifetime. However for doses above 200 Gy, the activation energy increases as the dose increases. This behavior could be explained by the formation of large electrically active defect complexes through the addition of new radiation defects to the defects formed at low doses.

U2 - 10.1149/06914.0137ecst

DO - 10.1149/06914.0137ecst

M3 - Conference article

AN - SCOPUS:84945931229

SN - 1938-5862

VL - 69

SP - 137

EP - 144

JO - ECS Transactions

JF - ECS Transactions

IS - 14

T2 - State-of-the-Art Program on Compound Semiconductors 58, (SOTAPOCS 58) (at the 228th ECS Meeting)

Y2 - 11 October 2015 through 15 October 2015

ER -

Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs)

Abstract

All Science Journal Classification (ASJC) codes

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