TY - JOUR
T1 - Charge transfer between carbon nanotubes on surfaces
AU - Araujo, Karolline A. S.
AU - Barboza, Ana P. M.
AU - Fernandes, Thales F. D.
AU - Shadmi, Nitzan
AU - Joselevich, Ernesto
AU - Mazzoni, Mario S. C.
AU - Neves, Bernardo R. A.
N1 - N/A
PY - 2015/10/21
Y1 - 2015/10/21
N2 - The charge transfer between neighboring single-walled carbon nanotubes (SWNTs) on a silicon oxide surface was investigated as a function of both the SWNT nature (metallic or semiconducting) and the anode/cathode distance using scanning probe techniques. Two main mechanisms were observed: a direct electron tunneling described by the typical Fowler-Nordheim model, and indirect electron transfer (hopping) mediated by functional groups on the supporting surface. Both mechanisms depend on the SWNT nature and on the anode/cathode separation: direct electron tunneling dominates the charge transfer process for metallic SWNTs, especially for large distances, while both mechanisms compete with each other for semiconducting SWNTs, prevailing one over the other depending on the anode/cathode separation. These mechanisms may significantly influence the design and operation of SWNT-based electronic devices.
AB - The charge transfer between neighboring single-walled carbon nanotubes (SWNTs) on a silicon oxide surface was investigated as a function of both the SWNT nature (metallic or semiconducting) and the anode/cathode distance using scanning probe techniques. Two main mechanisms were observed: a direct electron tunneling described by the typical Fowler-Nordheim model, and indirect electron transfer (hopping) mediated by functional groups on the supporting surface. Both mechanisms depend on the SWNT nature and on the anode/cathode separation: direct electron tunneling dominates the charge transfer process for metallic SWNTs, especially for large distances, while both mechanisms compete with each other for semiconducting SWNTs, prevailing one over the other depending on the anode/cathode separation. These mechanisms may significantly influence the design and operation of SWNT-based electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=84942943257&partnerID=8YFLogxK
U2 - 10.1039/c5nr03547c
DO - 10.1039/c5nr03547c
M3 - Article
SN - 2040-3364
VL - 7
SP - 16175
EP - 16181
JO - Nanoscale
JF - Nanoscale
IS - 39
ER -