Effect of doping density on the charge rearrangement and interface dipole at the molecule-silicon interface

Omer Yaffe; Sidharam Pujari; Ofer Sinai; Ayelet Vilan; Han Zuilhof; Antoine Kahn; Leeor Kronik; Hagai Cohen; David Cahen

doi:10.1021/jp403177e

Effect of doping density on the charge rearrangement and interface dipole at the molecule-silicon interface

Omer Yaffe, Sidharam Pujari, Ofer Sinai, Ayelet Vilan, Han Zuilhof, Antoine Kahn, Leeor Kronik, Hagai Cohen, David Cahen

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The interface level alignment of alkyl and alkenyl monolayers, covalently bound to oxide-free Si substrates of various doping levels, is studied using X-ray photoelectron spectroscopy. Using shifts in the C 1s and Si 2p photoelectron peaks as a sensitive probe, we find that charge distribution around the covalent Si-C bond dipole changes according to the initial position of the Fermi level within the Si substrate. This shows that the interface dipole is not fixed but rather changes with the doping level. These results set limits to the applicability of simple models to describe level alignment at interfaces and show that the interface bond and dipole may change according to the electrostatic potential at the interface.

Original language	English
Pages (from-to)	22422-22427
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	117
Issue number	43
DOIs	https://doi.org/10.1021/jp403177e
Publication status	Published - 31 Oct 2013

Funding

Israel Science Foundation via its centers of Excellence program; US-Israel Science Foundation; National Science Foundation [DMR-1005892]; Wolfson Family Trust; Kimmel Centre for Nanoscale Science; Azrieli Foundation; Weizmann Institute of ScienceAV, LK, and DC thank the Israel Science Foundation via its centers of Excellence program, for partial support. DC and AK thank the US-Israel Science Foundation for partial support. Work at Princeton University was further supported by the National Science Foundation (DMR-1005892). DC and LK are grateful to the Wolfson Family Trust and the Kimmel Centre for Nanoscale Science for support. LK thanks the Lise Meitner Minerva Center for Computational Chemistry. OY thanks the Azrieli Foundation for the award of a Fellowship. HZ thanks the Weizmann Institute of Science for the award of the 2013-2014 Joseph Meyerhoff Visiting Professorship. DC holds the Rowland and Sylvia Schaefer chair in Energy research.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Energy
Surfaces, Coatings and Films
Physical and Theoretical Chemistry

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10.1021/jp403177e

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abstract = "The interface level alignment of alkyl and alkenyl monolayers, covalently bound to oxide-free Si substrates of various doping levels, is studied using X-ray photoelectron spectroscopy. Using shifts in the C 1s and Si 2p photoelectron peaks as a sensitive probe, we find that charge distribution around the covalent Si-C bond dipole changes according to the initial position of the Fermi level within the Si substrate. This shows that the interface dipole is not fixed but rather changes with the doping level. These results set limits to the applicability of simple models to describe level alignment at interfaces and show that the interface bond and dipole may change according to the electrostatic potential at the interface.",

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AU - Yaffe, Omer

AU - Pujari, Sidharam

AU - Sinai, Ofer

AU - Vilan, Ayelet

AU - Zuilhof, Han

AU - Kahn, Antoine

AU - Kronik, Leeor

AU - Cohen, Hagai

AU - Cahen, David

PY - 2013/10/31

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AB - The interface level alignment of alkyl and alkenyl monolayers, covalently bound to oxide-free Si substrates of various doping levels, is studied using X-ray photoelectron spectroscopy. Using shifts in the C 1s and Si 2p photoelectron peaks as a sensitive probe, we find that charge distribution around the covalent Si-C bond dipole changes according to the initial position of the Fermi level within the Si substrate. This shows that the interface dipole is not fixed but rather changes with the doping level. These results set limits to the applicability of simple models to describe level alignment at interfaces and show that the interface bond and dipole may change according to the electrostatic potential at the interface.

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IS - 43

ER -

Effect of doping density on the charge rearrangement and interface dipole at the molecule-silicon interface

Abstract

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