Electrical depth profiling in thin SiON layers

Keyphrases

• Surface Charge 100%
• Depth Profiling 100%
• SiON Layer 100%
• Non-contact 50%
• Heterostructure 50%
• X-ray Photoelectron Spectroscopy 50%
• Oxide Layer 50%
• Angle-resolved Photoemission Spectroscopy (ARPES) 50%
• Non-destructive 50%
• Internal Structure 50%
• Electrical Data 50%
• Gate Oxide 50%
• Silicon Oxynitride (SiON) 50%
• Time-of-flight Secondary Ion Mass Spectrometry (ToF-SIMS) 50%
• Charging Process 50%
• Chemical Contrast 50%
• Nitrogen Enrichment 50%
• Compositional Analysis 50%

Material Science

• Oxide Compound 100%
• Photoemission Spectroscopy 100%
• Surface (Surface Science) 100%
• Heterojunction 50%
• Film 50%
• Secondary Ion Mass Spectrometry 50%
• Phase Composition 50%

Engineering

• Ray Photoelectron Spectroscopy 100%
• Heterostructures 50%
• Time-of-Flight 50%
• Oxide Layer 50%
• Internal Structure 50%
• Gate Oxide 50%
• Phase Composition 50%