Experimental evidence for defect tolerance in Pb-halide perovskites

Naga Prathibha Jasti; Igal Levine; Yishay Isai Feldman; Gary Hodes; Sigalit Aharon; David Cahen

doi:10.1073/pnas.2316867121

Experimental evidence for defect tolerance in Pb-halide perovskites

Naga Prathibha Jasti, Igal Levine, Yishay Isai Feldman, Gary Hodes, Sigalit Aharon^*, David Cahen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The term defect tolerance (DT) is used often to rationalize the exceptional optoelectronic properties of halide perovskites (HaPs) and their devices. Even though DT lacked direct experimental evidence, it became a "fact" in the field. DT in semiconductors implies that structural defects do not translate to electrical and optical effects (e.g., due to charge trapping), associated with such defects. We present pioneering direct experimental evidence for DT in Pb-HaPs by comparing the structural quality of 2-dimensional (2D), 2D-3D, and 3D Pb-iodide HaP crystals with their optoelectronic characteristics using high-sensitivity methods. Importantly, we get information from the materials' bulk because we sample at least a few hundred nanometers, up to several micrometers, from the sample's surface, which allows for assessing intrinsic bulk (and not only surface-) properties of HaPs. The results point to DT in 3D, 2D-3D, and 2D Pb-HaPs. Overall, our data provide an experimental basis to rationalize DT in Pb-HaPs. These experiments and findings will help the search for and design of materials with real DT.

Original language	English
Article number	e2316867121
Journal	Proceedings of the National Academy of Sciences of the United States of America
Volume	121
Issue number	18
Early online date	24 Apr 2024
DOIs	https://doi.org/10.1073/pnas.2316867121
Publication status	Published - 30 Apr 2024

Funding

.P.J. and S.A. thank Dr. Davide Raffele Cerrati for providing the MAPI-LQ crystals, Dr. Sujit Kumar for help with PL measurements, and Dr. Anna Kossoy for assistance in the XRD measurements. I.L., S.A., and D.C. thank Prof. Lioz Etgar and Tal Binyamin for their help with the TRPL measurements. N.P.J. acknowledges funding from the European Union’s Horizon 2020 MSCA Innovative Training Network MAESTRO under grant agreement no. 764787. At Bar-Ilan University, work was supported also by the Israel Ministry of Energy as part of the Solar ERAnet PerDry consortium. At the Weizmann Institute of Science (D.C.), the work received support from the Minerva Centre for Self-Repairing Systems for Energy & Sustainability and the Sustainability and Energy Research Initiative, SAERI. I.L. thanks the AiF project (ZIM-KK5085302DF0) for financial support and Dr. Thomas Dittrich for fruitful conversations.

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@article{7c60284f61804dfe857ed2acc2ee0dfe,

title = "Experimental evidence for defect tolerance in Pb-halide perovskites",

abstract = "The term defect tolerance (DT) is used often to rationalize the exceptional optoelectronic properties of halide perovskites (HaPs) and their devices. Even though DT lacked direct experimental evidence, it became a {"}fact{"} in the field. DT in semiconductors implies that structural defects do not translate to electrical and optical effects (e.g., due to charge trapping), associated with such defects. We present pioneering direct experimental evidence for DT in Pb-HaPs by comparing the structural quality of 2-dimensional (2D), 2D-3D, and 3D Pb-iodide HaP crystals with their optoelectronic characteristics using high-sensitivity methods. Importantly, we get information from the materials' bulk because we sample at least a few hundred nanometers, up to several micrometers, from the sample's surface, which allows for assessing intrinsic bulk (and not only surface-) properties of HaPs. The results point to DT in 3D, 2D-3D, and 2D Pb-HaPs. Overall, our data provide an experimental basis to rationalize DT in Pb-HaPs. These experiments and findings will help the search for and design of materials with real DT.",

author = "Jasti, \{Naga Prathibha\} and Igal Levine and Feldman, \{Yishay Isai\} and Gary Hodes and Sigalit Aharon and David Cahen",

year = "2024",

month = apr,

day = "30",

doi = "10.1073/pnas.2316867121",

language = "English",

volume = "121",

journal = "Proceedings of the National Academy of Sciences of the United States of America",

issn = "0027-8424",

publisher = "National Academy of Sciences",

number = "18",

}

TY - JOUR

T1 - Experimental evidence for defect tolerance in Pb-halide perovskites

AU - Jasti, Naga Prathibha

AU - Levine, Igal

AU - Feldman, Yishay Isai

AU - Hodes, Gary

AU - Aharon, Sigalit

AU - Cahen, David

PY - 2024/4/30

Y1 - 2024/4/30

N2 - The term defect tolerance (DT) is used often to rationalize the exceptional optoelectronic properties of halide perovskites (HaPs) and their devices. Even though DT lacked direct experimental evidence, it became a "fact" in the field. DT in semiconductors implies that structural defects do not translate to electrical and optical effects (e.g., due to charge trapping), associated with such defects. We present pioneering direct experimental evidence for DT in Pb-HaPs by comparing the structural quality of 2-dimensional (2D), 2D-3D, and 3D Pb-iodide HaP crystals with their optoelectronic characteristics using high-sensitivity methods. Importantly, we get information from the materials' bulk because we sample at least a few hundred nanometers, up to several micrometers, from the sample's surface, which allows for assessing intrinsic bulk (and not only surface-) properties of HaPs. The results point to DT in 3D, 2D-3D, and 2D Pb-HaPs. Overall, our data provide an experimental basis to rationalize DT in Pb-HaPs. These experiments and findings will help the search for and design of materials with real DT.

AB - The term defect tolerance (DT) is used often to rationalize the exceptional optoelectronic properties of halide perovskites (HaPs) and their devices. Even though DT lacked direct experimental evidence, it became a "fact" in the field. DT in semiconductors implies that structural defects do not translate to electrical and optical effects (e.g., due to charge trapping), associated with such defects. We present pioneering direct experimental evidence for DT in Pb-HaPs by comparing the structural quality of 2-dimensional (2D), 2D-3D, and 3D Pb-iodide HaP crystals with their optoelectronic characteristics using high-sensitivity methods. Importantly, we get information from the materials' bulk because we sample at least a few hundred nanometers, up to several micrometers, from the sample's surface, which allows for assessing intrinsic bulk (and not only surface-) properties of HaPs. The results point to DT in 3D, 2D-3D, and 2D Pb-HaPs. Overall, our data provide an experimental basis to rationalize DT in Pb-HaPs. These experiments and findings will help the search for and design of materials with real DT.

UR - https://www.scopus.com/pages/publications/85191493247

U2 - 10.1073/pnas.2316867121

DO - 10.1073/pnas.2316867121

M3 - Article

C2 - 38657051

AN - SCOPUS:85191493247

SN - 0027-8424

VL - 121

JO - Proceedings of the National Academy of Sciences of the United States of America

JF - Proceedings of the National Academy of Sciences of the United States of America

IS - 18

M1 - e2316867121

ER -

Experimental evidence for defect tolerance in Pb-halide perovskites

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