Fullerene-like nanostructures, their use and process for their production

Reshef Tenne; Francis Leonard Deepak; Hagai Cohen; Sidney R. Cohen; Rita Rosentsveig; Lena Yadgarov

Fullerene-like nanostructures, their use and process for their production

Reshef Tenne (Inventor), Francis Leonard Deepak (Inventor), Hagai Cohen (Inventor), Sidney R. Cohen (Inventor), Rita Rosentsveig (Inventor), Lena Yadgarov (Inventor)

Research output: Patent

Abstract

A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), A1-x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ≤0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.

Original language	English
Patent number	US20100227782
IPC	C10M125/04,H01B1/02,H01F1/00
Priority date	10/9/07
Filing date	10/3/10
Publication status	Published - 9 Sept 2010

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title = "Fullerene-like nanostructures, their use and process for their production",

abstract = "A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), A1-x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ≤0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.",

author = "Reshef Tenne and Deepak, {Francis Leonard} and Hagai Cohen and Cohen, {Sidney R.} and Rita Rosentsveig and Lena Yadgarov",

year = "2010",

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type = "Patent",

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T1 - Fullerene-like nanostructures, their use and process for their production

AU - Tenne, Reshef

AU - Deepak, Francis Leonard

AU - Cohen, Hagai

AU - Cohen, Sidney R.

AU - Rosentsveig, Rita

AU - Yadgarov, Lena

PY - 2010/9/9

Y1 - 2010/9/9

N2 - A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), A1-x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ≤0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.

AB - A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), A1-x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ≤0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.

M3 - Patent

M1 - US20100227782

Y2 - 2010/03/10

ER -

Fullerene-like nanostructures, their use and process for their production

Abstract

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