Abstract
Gd-doped CeO2 exhibits an anomalously large electrostriction effect generating stress that can reach 500 MPa. In situ XANES measurements indicate that the stress develops in response to the rearrangement of cerium-oxygen vacancy pairs. This mechanism is fundamentally different from that of materials currently in use and suggests that Gd-doped ceria is a representative of a new family of high-performance electromechanical materials.
Original language | English |
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Pages (from-to) | 5857-5861 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 24 |
Issue number | 43 |
DOIs | |
Publication status | Published - 14 Nov 2012 |
Funding
US-Israel Binational Science Foundation; U.S. Department of Energy [DE-FG02-03ER15476]; Synchrotron Catalysis Consortium, U.S. Department of Energy [DE-FG02-05ER15688]; Department of Energy by Basic Energy Sciences, U.S. Department of Energy [DE SC0002633]I.L. wishes to thank the US-Israel Binational Science Foundation for funding this research. I. L. wishes to acknowledge the Nancy and Stephen Grand Research Center for Sensors and Security. The research is also made possible in part by the generosity of the Harold Perlman Family. A. I. F. and A. P. acknowledge support by U.S. Department of Energy Grant DE-FG02-03ER15476. Beamline X18A at the NSLS is supported in part by the Synchrotron Catalysis Consortium, U.S. Department of Energy Grant No DE-FG02-05ER15688. HLT thanks the Weizmann Institute of Science for his appointment as Joseph Meyerhoff Visiting Professor and the Department of Energy for his research support by Basic Energy Sciences, U.S. Department of Energy (contract # DE SC0002633).
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering