Abstract
We report the guided growth of highly coherent, horizontal GaN nanowires (NWs) on atomically flat singular SiC (0001) and on periodically stepped vicinal SiC (0001) substrates. On singular SiC (0001) the NWs. grow in six symmetry-equivalent directions, while on vicinal SiC (0001) the NWs grow only in the two directions parallel to the atomic step edges. All of the NWs have the same epitaxial relations with the substrate on both singular and vicinal (0001). Owing to the low mismatch (similar to 3.4%) with the substrate, the NWs grow highly coherent, with a much lower density of misfit dislocations than previously observed on sapphire. This is also the first observation of NW VLS growth along atomic steps. Epitaxially coherent guided NWs have potential uses in many fields, including high-power electronics, light-emitting diodes (LEDs), and laser diodes.
| Original language | English |
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| Pages (from-to) | 5491-5496 |
| Number of pages | 6 |
| Journal | Nano Letters |
| Volume | 13 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Nov 2013 |
Funding
Israel Science Foundation; Minerva Stiftung; Kimmel Center for Nanoscale Science; Moskowitz Center for Nano and Bio-Nano Imaging; Carolito Stiftung; Israel Academy of ScienceWe thank Dr. L. Zeiri for assistance with PL measurements. This research was supported by the Israel Science Foundation, Minerva Stiftung, Kimmel Center for Nanoscale Science, Moskowitz Center for Nano and Bio-Nano Imaging, and the Carolito Stiftung. D.T. acknowledges support from the Adams Fellowship Program of the Israel Academy of Science.