Guided growth of horizontal GaN nanowires on spinel with orientation-controlled morphologies

David Tsivion; Ernesto Joselevich

doi:10.1021/jp504785v

Guided growth of horizontal GaN nanowires on spinel with orientation-controlled morphologies

David Tsivion, Ernesto Joselevich^*

^*Corresponding author for this work

Department of Molecular Chemistry and Materials Science Perlman

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the guided growth of horizontal GaN nanowires (NWs) on spinel (MgAl₂O₄) substrates with three different orientations: (111), (100), and (110). The NWs form ordered arrays with distinct morphologies on the surface of the substrates, controlled by the interaction with the substrate. The geometry of the NWs matches the symmetry of the spinel surfaces: on MgAl₂O₄(111), (100), and (110) the NWs grow in six, four, and two directions, respectively. The epitaxial relations and morphologies of the NW-substrate interface were characterized by cross-sectional transmission electron microscopy. The substrate was found to be mobilized during the growth and either climb up or recede on/under one or two sides of the NW, depending on the substrate orientation. Possible reasons for the similarity and differences between the orientations of the NWs and thin GaN films grown on MgAl₂O₄ are proposed. These results demonstrate the generality and flexibility of the guided growth phenomenon in NWs and specifically show that MgAl₂O₄(111) could be a low-mismatch substrate for the growth of high-quality GaN layers and NWs.

Original language	English
Pages (from-to)	19158-19164
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	118
Issue number	33
DOIs	https://doi.org/10.1021/jp504785v
Publication status	Published - 21 Aug 2014

Funding

European Research Council (ERC) [338849]; Israel Science Foundation; Minerva Stiftung; Kimmel Center for Nanoscale Science; Moskowitz Center for Nano and Bio-Nano Imaging; Carolito Stiftung; Adams Fellowship Program of the Israel Academy of ScienceThis research was supported by a European Research Council (ERC) Advanced Grant No. 338849, the Israel Science Foundation, Minerva Stiftung, Kimmel Center for Nanoscale Science, Moskowitz Center for Nano and Bio-Nano Imaging, and the Carolito Stiftung. D.T. acknowledges support from the Adams Fellowship Program of the Israel Academy of Science.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Energy
Surfaces, Coatings and Films
Physical and Theoretical Chemistry

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title = "Guided growth of horizontal GaN nanowires on spinel with orientation-controlled morphologies",

abstract = "We report the guided growth of horizontal GaN nanowires (NWs) on spinel (MgAl2O4) substrates with three different orientations: (111), (100), and (110). The NWs form ordered arrays with distinct morphologies on the surface of the substrates, controlled by the interaction with the substrate. The geometry of the NWs matches the symmetry of the spinel surfaces: on MgAl2O4(111), (100), and (110) the NWs grow in six, four, and two directions, respectively. The epitaxial relations and morphologies of the NW-substrate interface were characterized by cross-sectional transmission electron microscopy. The substrate was found to be mobilized during the growth and either climb up or recede on/under one or two sides of the NW, depending on the substrate orientation. Possible reasons for the similarity and differences between the orientations of the NWs and thin GaN films grown on MgAl2O4 are proposed. These results demonstrate the generality and flexibility of the guided growth phenomenon in NWs and specifically show that MgAl2O4(111) could be a low-mismatch substrate for the growth of high-quality GaN layers and NWs.",

author = "David Tsivion and Ernesto Joselevich",

year = "2014",

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AU - Joselevich, Ernesto

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N2 - We report the guided growth of horizontal GaN nanowires (NWs) on spinel (MgAl2O4) substrates with three different orientations: (111), (100), and (110). The NWs form ordered arrays with distinct morphologies on the surface of the substrates, controlled by the interaction with the substrate. The geometry of the NWs matches the symmetry of the spinel surfaces: on MgAl2O4(111), (100), and (110) the NWs grow in six, four, and two directions, respectively. The epitaxial relations and morphologies of the NW-substrate interface were characterized by cross-sectional transmission electron microscopy. The substrate was found to be mobilized during the growth and either climb up or recede on/under one or two sides of the NW, depending on the substrate orientation. Possible reasons for the similarity and differences between the orientations of the NWs and thin GaN films grown on MgAl2O4 are proposed. These results demonstrate the generality and flexibility of the guided growth phenomenon in NWs and specifically show that MgAl2O4(111) could be a low-mismatch substrate for the growth of high-quality GaN layers and NWs.

AB - We report the guided growth of horizontal GaN nanowires (NWs) on spinel (MgAl2O4) substrates with three different orientations: (111), (100), and (110). The NWs form ordered arrays with distinct morphologies on the surface of the substrates, controlled by the interaction with the substrate. The geometry of the NWs matches the symmetry of the spinel surfaces: on MgAl2O4(111), (100), and (110) the NWs grow in six, four, and two directions, respectively. The epitaxial relations and morphologies of the NW-substrate interface were characterized by cross-sectional transmission electron microscopy. The substrate was found to be mobilized during the growth and either climb up or recede on/under one or two sides of the NW, depending on the substrate orientation. Possible reasons for the similarity and differences between the orientations of the NWs and thin GaN films grown on MgAl2O4 are proposed. These results demonstrate the generality and flexibility of the guided growth phenomenon in NWs and specifically show that MgAl2O4(111) could be a low-mismatch substrate for the growth of high-quality GaN layers and NWs.

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JO - Journal of Physical Chemistry C

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Guided growth of horizontal GaN nanowires on spinel with orientation-controlled morphologies

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