Abstract
Perfectly aligned horizontal ZnSe nanowires are obtained by guided growth, and easily integrated into high-performance blue-UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the way for the large-scale integration of nanowires into optoelectronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 3999-4005 |
| Number of pages | 7 |
| Journal | Advanced Materials |
| Volume | 27 |
| Issue number | 27 |
| DOIs | |
| Publication status | Published - 15 Jul 2015 |
Funding
European Research Council (ERC) [338849]; Israel Science Foundation; Minerva Stiftung; Kimmel Center for Nanoscale Science; Moskowitz Center for Nano and Bio-Nano Imaging; Perlman Family Foundation The authors thank Dr. D. Tsivion and N. Shadmi for helpful discussions. This research was supported by a European Research Council (ERC) Advanced Grant No. 338849, the Israel Science Foundation, Minerva Stiftung, Kimmel Center for Nanoscale Science, Moskowitz Center for Nano and Bio-Nano Imaging, and Perlman Family Foundation. E. J. is incumbent of the Drake Family Professorial Chair in Nanotechnology.
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science