Kinetics of guided growth of horizontal gan nanowires on flat and faceted sapphire surfaces

Amnon Rothman; Jaroslav Maniš; Vladimir G. Dubrovskii; Tomáš Šikola; Jindřich Mach; Ernesto Joslevich

doi:10.3390/nano11030624

Kinetics of guided growth of horizontal gan nanowires on flat and faceted sapphire surfaces

Amnon Rothman, Jaroslav Maniš, Vladimir G. Dubrovskii, Tomáš Šikola, Jindřich Mach, Ernesto Joslevich^*

^*Corresponding author for this work

Department of Molecular Chemistry and Materials Science Perlman

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes—either the Gibbs–Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.

Original language	English
Article number	624
Number of pages	9
Journal	Nanomaterials
Volume	11
Issue number	3
DOIs	https://doi.org/10.3390/nano11030624
Publication status	Published - 3 Mar 2021

Funding

This research was supported by the European Research Council (ERC) Proof of Concept (PoC) Grant No. 838702, Israel Science Foundation (No. 2444/19), Strengthening Nanoscience and Nanotechnology Research at CEITEC (SINNCE) No. 810626, Helen and Martin Kimmel Center for Nanoscale Science, Moskowitz Center for Nano and Bio-Nano Imaging. E.J. holds the Drake Family Professorial Chair of Nanotechnology. V.G.D. thanks the Russian Science Foundation for financial support under Grant No. 19-72-30004. A.R. and E.J. planned the experiments. A.R. and J.M. (Jaroslav Maniš) synthesized the NWs and took the SEM images. A.R. took the AFM images. V.G.D. developed the model. A.R. analyzed the data. T.Š. and J.M. (Jindřich Mach) reviewed and corrected the manuscript. All authors have read and agreed to the published version of the manuscript.

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science

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10.3390/nano11030624Licence: CC BY

Cite this

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title = "Kinetics of guided growth of horizontal gan nanowires on flat and faceted sapphire surfaces",

abstract = "The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes—either the Gibbs–Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.",

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year = "2021",

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doi = "10.3390/nano11030624",

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AU - Rothman, Amnon

AU - Maniš, Jaroslav

AU - Dubrovskii, Vladimir G.

AU - Šikola, Tomáš

AU - Mach, Jindřich

AU - Joslevich, Ernesto

PY - 2021/3/3

Y1 - 2021/3/3

N2 - The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes—either the Gibbs–Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.

AB - The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes—either the Gibbs–Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.

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JF - Nanomaterials

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ER -

Kinetics of guided growth of horizontal gan nanowires on flat and faceted sapphire surfaces

Abstract

Funding

All Science Journal Classification (ASJC) codes

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