Selective-Area Growth of Aligned Organic Semiconductor Nanowires and Their Device Integration

Xingyu Wang, Yuhao Luo, Jihui Liao, Ernesto Joselevich*, Jinyou Xu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The simultaneous control of the orientation and position of organic semiconductor nanowires remains a major challenge when integrating them into monolithic devices. In this study, tris(8-hydroxyquinoline)aluminum(III) (Alq3) molecules are self-assembled into single-crystalline nanowires with consistent orientation and predictable positions by selective-area graphoepitaxial growth. The nanowire orientation is determined by parallel nanogrooves on a periodically modified faceted sapphire surface, and the position is simultaneously defined using a shadow mask. Computational fluid dynamics simulations showed that the mass flow field over the sapphire surface is tailored by the mask, resulting in preferential nanowire nucleation around the hole centers and leaving sufficient free space for the subsequent growth. Accordingly, the number, length, and density of the nanowires can be controlled by adjusting the mask layout. The good alignment and predictable positions of these nanowires facilitated their subsequent device integration, eliminating laborious assembly steps and potential damage after nanowire growth. Measurements from an in situ integrated two-terminal device based on the Alq3 nanowires revealed that the nanowires exhibit a remarkable negative differential resistance and fast photoresponse in the UV region. Overall, selective-area graphoepitaxial growth provides a versatile protocol for fabricating site- and orientation-controlled organic semiconductor nanowires for the monolithic fabrication of nanowire-based devices.A versatile method for growing orientation-controlled organic nanowires with predictable positions is proposed by combining the selective shadow effect of microsized holes with the graphoepitaxial mechanism along periodic nanofeatures. Simulations confirmed that the selective-area graphoepitaxial growth is driven by the hole-tailored mass-flow field. An in-situ integrated device based on Alq3 nanowires exhibited an intriguing negative differential resistance and fast photoresponse.image
Original languageEnglish
Article number2308708
Number of pages14
JournalAdvanced Functional Materials
DOIs
Publication statusPublished Online - Nov 2023

Funding

The authors acknowledge financial support from 2019QN01C290, Guangdong Basic and Applied Basic Research Foundation (No. 2021A1515012235), Science and Technology Program of Guangzhou (No. 2019050001), Outstanding Young Scholar at South China Normal University, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology under Grant (No. 2017B030301007), Israel Science Foundation (Grant No. 244/19), National Center for International Research on Green Optoelectronics, MOE International Laboratory for Optical Information Technologies, and Higher Education Discipline Innovation Project (No. D16009), and China Scholarship Council (award to Xingyu Wang for study abroad at the Weizmann institute of Science).

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