Sub- mu m semiconductor device structures in CuInSe2

S Richter; V Lyakhovitskaya; S. R. Cohen; Konstantin Gartsman; David Cahen; Y Manassen

Sub- mu m semiconductor device structures in CuInSe2

S Richter, V Lyakhovitskaya, S. R. Cohen, Konstantin Gartsman, David Cahen, Y Manassen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We fabricate sub-micron sized diode and transistor structures (down to 100 nm in diameter) inside CuInSe2 crystals by inducing thermally assisted electromigration of mobile dopants. This is achieved by applying an electric field via a small area contact to the crystals, using a conducting Atomic Force Microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles, that result from the electric field action. Calculations suggest that the smallest of the structures that we made are very close to the lower size limit of possible p/n/p devices.

Original language	English
Title of host publication	Ternary and Multinary Compounds
Subtitle of host publication	Proceedings of the 11th International Conference, University of Salford, 8-12 September, 1997
Editors	R. D. Tomlinson, A. E. Hill, R. D. Pilkington
Pages	943-946
Number of pages	4
Volume	152
Publication status	Published - 1998
Event	11th International Conference on Ternary and Multinary Compounds - Salford, United Kingdom Duration: 8 Sept 1997 → 12 Sept 1997

Publication series

Series	Institute of Physics Conference Series

Conference

Conference	11th International Conference on Ternary and Multinary Compounds
Abbreviated title	ICTMC-11
Country/Territory	United Kingdom
City	Salford
Period	8/9/97 → 12/9/97

Cite this

@inproceedings{83bbff3aa69d418f80c42235602d0a4f,

title = "Sub- mu m semiconductor device structures in CuInSe2",

abstract = "We fabricate sub-micron sized diode and transistor structures (down to 100 nm in diameter) inside CuInSe2 crystals by inducing thermally assisted electromigration of mobile dopants. This is achieved by applying an electric field via a small area contact to the crystals, using a conducting Atomic Force Microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles, that result from the electric field action. Calculations suggest that the smallest of the structures that we made are very close to the lower size limit of possible p/n/p devices.",

author = "S Richter and V Lyakhovitskaya and Cohen, {S. R.} and Konstantin Gartsman and David Cahen and Y Manassen",

year = "1998",

language = "English",

isbn = "9780750304382",

volume = "152",

series = "Institute of Physics Conference Series",

publisher = "Institute of Physics Publishing",

pages = "943--946",

editor = "Tomlinson, {R. D.} and Hill, {A. E.} and Pilkington, {R. D.}",

booktitle = "Ternary and Multinary Compounds",

note = "11th International Conference on Ternary and Multinary Compounds, ICTMC-11 ; Conference date: 08-09-1997 Through 12-09-1997",

}

Richter, S, Lyakhovitskaya, V, Cohen, SR , Gartsman, K , Cahen, D & Manassen, Y 1998, Sub- mu m semiconductor device structures in CuInSe2. in RD Tomlinson, AE Hill & RD Pilkington (eds), Ternary and Multinary Compounds: Proceedings of the 11th International Conference, University of Salford, 8-12 September, 1997. vol. 152, Institute of Physics Conference Series, pp. 943-946, 11th International Conference on Ternary and Multinary Compounds, Salford, United Kingdom, 8/9/97.

Sub- mu m semiconductor device structures in CuInSe2. / Richter, S; Lyakhovitskaya, V; Cohen, S. R. et al.
Ternary and Multinary Compounds: Proceedings of the 11th International Conference, University of Salford, 8-12 September, 1997. ed. / R. D. Tomlinson; A. E. Hill; R. D. Pilkington. Vol. 152 1998. p. 943-946 (Institute of Physics Conference Series).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Sub- mu m semiconductor device structures in CuInSe2

AU - Richter, S

AU - Lyakhovitskaya, V

AU - Cohen, S. R.

AU - Gartsman, Konstantin

AU - Cahen, David

AU - Manassen, Y

PY - 1998

Y1 - 1998

N2 - We fabricate sub-micron sized diode and transistor structures (down to 100 nm in diameter) inside CuInSe2 crystals by inducing thermally assisted electromigration of mobile dopants. This is achieved by applying an electric field via a small area contact to the crystals, using a conducting Atomic Force Microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles, that result from the electric field action. Calculations suggest that the smallest of the structures that we made are very close to the lower size limit of possible p/n/p devices.

AB - We fabricate sub-micron sized diode and transistor structures (down to 100 nm in diameter) inside CuInSe2 crystals by inducing thermally assisted electromigration of mobile dopants. This is achieved by applying an electric field via a small area contact to the crystals, using a conducting Atomic Force Microscope tip. The structures are characterized by nm scale scanning spreading resistance and scanning capacitance measurements to reveal the inhomogeneous doping profiles, that result from the electric field action. Calculations suggest that the smallest of the structures that we made are very close to the lower size limit of possible p/n/p devices.

M3 - Conference contribution

SN - 9780750304382

VL - 152

T3 - Institute of Physics Conference Series

SP - 943

EP - 946

BT - Ternary and Multinary Compounds

A2 - Tomlinson, R. D.

A2 - Hill, A. E.

A2 - Pilkington, R. D.

T2 - 11th International Conference on Ternary and Multinary Compounds

Y2 - 8 September 1997 through 12 September 1997

ER -

Richter S, Lyakhovitskaya V, Cohen SR , Gartsman K , Cahen D, Manassen Y. Sub- mu m semiconductor device structures in CuInSe2. In Tomlinson RD, Hill AE, Pilkington RD, editors, Ternary and Multinary Compounds: Proceedings of the 11th International Conference, University of Salford, 8-12 September, 1997. Vol. 152. 1998. p. 943-946. (Institute of Physics Conference Series).

Sub- mu m semiconductor device structures in CuInSe2

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