Abstract
An eight-orders of magnitude enhancement in current across Hg/X-styrene-Si junctions is caused by merely altering a substituent, X. Interface states are passivated and, depending on X, the Si Schottky junction encompasses the full range from Ohmic to strongly rectifying. This powerful electrostatic molecular effect has immediate implications for interface band alignment and sensing.
| Original language | English |
|---|---|
| Pages (from-to) | 702-706 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 25 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 6 Feb 2013 |
Funding
Israel Science Foundation, ISF, through its Centre of Excellence programs; Wolfson Family Charitable Foundation; Grand Centre for Sensors and Security; GMJ Schmidt Minerva center for Supramolecular architectureWe thank Drs. Rotem Har-Lavan and Robert Lovrincic for fruitful discussions, the Israel Science Foundation, ISF, through its Centre of Excellence programs, the Wolfson Family Charitable Foundation, the Grand Centre for Sensors and Security and the GMJ Schmidt Minerva center for Supramolecular architecture for partial support. This work was made possible in part by the historic generosity of the Harold Perlman family. D.C. holds the Sylvia and Rowland Schaefer Chair in Energy Research.
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science